The equipment introduction: This equipment ionizes a gas containing a film-constituting atom by means of radio frequency, etc., and forms a plasma locally. The plasma is chemically active and reacts easily, and a desired film is deposited on the substrate. In order to allow the chemical reaction to proceed at a lower temperature, the activity of the plasma is utilized to promote the reaction, and thus the CVD is called plasma enhanced chemical vapor deposition (PECVD).

Product Description: This equipment is a fixed single temperature zone PECVD system, which includes D60x1000L mm single temperature zone tube furnace, 500W plasma RF power source, 3 channel mass flow air supply system and vacuum unit.

The main components of the system and features:

The equipment is mainly composed of a tubular heating furnace body, a vacuum system, a proton flow gas supply system, a radio frequency plasma source, a quartz reaction chamber and the like.

Main feature:

1. The gas in the quartz vacuum chamber is changed to an ionic state by a radio frequency power source.

2. The temperature required for PECVD to perform chemical vapor deposition is lower than that of ordinary CVD.

3. The stress of the deposited film can be controlled by the frequency of the RF power source.

4. PECVD has higher chemical vapor deposition rate, uniformity, consistency and stability than ordinary CVD.

5.Widely used: equipment can deposit SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, diamond-like and other films on the surface of sheet or similar shaped samples, and can deposit p-type, n-type doping Miscellaneous film. The deposited film has good uniformity, compactness, adhesion, and insulation. Widely used in cutting tools, high-precision molds, hard coatings, high-end decoration and other fields.

Please let me know your address in details,then we can send freight cost to you.